DocumentCode :
2533144
Title :
A novel surface modification method to achieve low impedance neural microelectrode arrays
Author :
Bhandari, R. ; Negi, S. ; Solzbacher, F.
Author_Institution :
Blackrock Microsyst., Salt Lake City, UT, USA
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
2196
Lastpage :
2199
Abstract :
Advances in neuroprostheses are strongly dependent on the development of microelectrodes with an enhanced ability to selectively record or stimulate neural signals. Selectivity for a microelectrode depends on its ability to interact with a small number of neurons and/or nerve fibers. In order to achieve selective electrical transduction, the surface area of active site should be on the order of tens of micrometers. However, as the area of the electrode decreases, the electrode impedance increases, which in turn affects the recording/stimulating characteristics (sensitivity). Thus there is a trade-off between selectivity and sensitivity. One option to overcome this trade-off is by generating a large functional active area without increasing the geometrical surface area (GSA) of the electrodes. This paper for the first time reports a novel method of using a combination of SF6 and O2 based reactive ion etching (RIE), to modify the surface of electrodes tip, in order to increase the RSA without increasing the GSA. The study demonstrates that by altering the surface morphology of the electrode tips, the impedance can be lowered significantly. The optimum etching power was 250 W which yielded mechanically robust, high charge storage capacity (CSC), and low electrochemical impedance surface.
Keywords :
microelectrodes; sputter etching; surface morphology; electrical transduction; geometrical surface area; low impedance neural microelectrode arrays; reactive ion etching; surface modification method; surface morphology; Electrodes; Impedance; Rough surfaces; Surface impedance; Surface morphology; Surface roughness; Surface treatment; Neural microelectrodes; low impedance; reactive ion etching; surface modification;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969395
Filename :
5969395
Link To Document :
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