Title :
A low-voltage conveyor-based CMOS transconductor
Author :
Yodprasit, Uroschanit ; Ngarmnil, Jitkasame
Author_Institution :
Dept. of Electron. Eng., Mahanakorn Univ. of Technol., Bangkok, Thailand
Abstract :
This paper presents a linear CMOS transconductor utilizing two triode-biased MOS transistors as input devices. Linearity of the transconductor is achieved by fixing the drain-to-source voltages of the triode-biased transistors by use of two first-generation current conveyors (CCI). The proposed transconductor operates with a single supply voltage of 1.5 V and has an input voltage range of up to 1.5 V peak to-peak with transconductance of about 20 μA/V within 1% THD
Keywords :
CMOS analogue integrated circuits; current conveyors; integrated circuit design; low-power electronics; 1.5 V; CCI; LV conveyor-based CMOS transconductor; first-generation current conveyors; linear CMOS transconductor; low-voltage operation; single supply voltage; triode-biased MOS transistors; BiCMOS integrated circuits; CMOS technology; Circuit simulation; Linearity; Low voltage; MOSFETs; Radiofrequency interference; Stacking; Topology; Transconductors;
Conference_Titel :
Circuits and Systems, 1998. IEEE APCCAS 1998. The 1998 IEEE Asia-Pacific Conference on
Conference_Location :
Chiangmai
Print_ISBN :
0-7803-5146-0
DOI :
10.1109/APCCAS.1998.743652
