A method for FinFET intermodulation analysis from TCAD simulations using a time-domain waveform approach

FinFETs are very promising for integrated circuit low signal anolog applications. In this paper we present, non-linear analysis of this type of devices using technology CAD (TCAD), which complements the already done studies about the advantages and possibilities of source/drain extension (SDE) engineering of FinFET for anolog applications. This is a simple and fast way to predict linearity using TCAD at an early stage FinFET design process. The method is based on time domain waveforms at drain and gate terminals at different input power level. By carrying out spectrum analysis of time-domain signals and knowing fundamental power P_fund and third order harmonics (IM₃) power at different input power have been used to determine third-order intercept (IP₃). The value of IP₃ obtained using approach is found to ~4 dBm at V_g = 0.25 V and V_d = 1.1 V. Further on V_g is varied at fixed V_d = 1.1 V, and effect of V_g on 3 fund IM₃/P_fund is investigated.