Planarized SiO/sub 2/ formation by a new microwave plasma system

Author

Fukuda, T. ; Ohue, M. ; Kikuchi, T. ; Suzuki, K. ; Sonobe, T. ; Momma, N.

Author_Institution

Hitachi Ltd., Ibaraki, Japan

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

665

Lastpage

668

Abstract

An improved microwave plasma system is proposed to form planarized SiO/sub 2/ interlayers for LSIs. A high planarization rate was achieved by controlling the formation of a cylindrical plasma and by adjusting the frequency applied to the substrate by which ions can be impinged onto the substrate at a maximum speed. Electric damage was decreased by using oxygen ion sputtering and by suppressing the stimulated bias voltage. These features ensure that a low-damage, planarized SiO/sub 2/ film is formed at a rate of more than 200 nm/min without a stimulated bias voltage.<>

Keywords

integrated circuit technology; large scale integration; oxidation; plasma deposition; semiconductor technology; silicon compounds; sputtering; 3.33 nm/s; LSIs; O ion sputtering; cylindrical plasma; electric damage; frequency; low-damage; microwave plasma system; planarisation; planarization rate; planarized SiO/sub 2/ film; planarized SiO/sub 2/ interlayers; stimulated bias voltage; Coils; Frequency; Magnetic fields; Plasma applications; Plasma confinement; Plasma transport processes; Plasma waves; Sputtering; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74367

Filename

74367