Title :
Low-temperature APCVD oxide using TEOS-ozone chemistry for multilevel interconnections
Author :
Kotani, H. ; Matsuura, M. ; Fujii, A. ; Genjou, H. ; Nagao, S.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A low-temperature APCVD (atmospheric-pressure chemical vapor deposition) process using TEOS-O/sub 3/ chemistry has been investigated as an interlayer dielectric application technique for multilevel interconnections. The deposition rates depend on the substrate materials, and the oxide films self-planarize the underlying topography, exhibiting smooth flowing profiles of step coverage as deposited. High-quality films can be formed by increasing the deposition temperature and the O/sub 3//TEOS ratio, and much more improvement can be achieved by annealing. This process has been successfully applied to submicron devices.<>
Keywords :
chemical vapour deposition; dielectric thin films; integrated circuit technology; oxidation; semiconductor technology; silicon compounds; SiO/sub 2/ films; TEOS-ozone chemistry; annealing; deposition rates; deposition temperature; interlayer dielectric; low temperature APCVD oxide; multilevel interconnections; planarisation; self planarize oxide films; smooth flowing profiles; step coverage; submicron devices; Chemistry; Dielectric materials; Dielectric substrates; Laboratories; Large scale integration; Plasma materials processing; Plasma temperature; Research and development; Semiconductor films; Surface topography;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74368
