Title :
Passive mode-locking of AlGaInAs quantum well laser, modelling and experiment
Author :
Bryce, A.C. ; Stolarz, P. ; Javaloyes, J. ; Hou, L. ; Sorel, M. ; Balle, S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
We have developed a comprehensive theoretical description of passive mode-locked semiconductor lasers based on a coarse-grained time-domain approach. The results are compared with the performance of a passively mode-locked AlGaInAs strained quantum well lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; laser mode locking; quantum well lasers; semiconductor device models; AlGaInAs; coarse-grained time-domain approach; passive mode-locking; quantum well laser; semiconductor lasers; Conducting materials; Laser mode locking; Laser stability; Laser theory; Optical pulses; Optical resonators; Optical saturation; Predictive models; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343169
