Title :
Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs
Author :
Tang, Chien-Shao ; Yu, Shao-Ming ; Chou, Hong-Mu ; Lee, Jam-Wem ; Li, Yiming
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, electrical characteristics of sub-10 nm nanowire FinFETs are investigated using a three-dimensional (3D) quantum correction simulation. Two different nanowire FinFETs, surrounding-gate FinFET and omega-shaped-gate one, are simulated with density-gradient-based model and compared in terms of on/off current, turn-on resistance, gate capacitance. It is found that the characteristic difference between surrounding-gate FinFET and omega-shaped-gate FinFET with a 70% coverage is insignificant. However, the former possesses better DIBL effect than the latter with different coverage ratios. Our examination presented here is useful in the fabrication of omega-shaped nanowire FinFETs.
Keywords :
MOSFET; capacitance; electric resistance; nanoelectronics; nanowires; semiconductor device models; 10 nm; DIBL effect; density gradient based model; electrical properties; gate capacitance; omega shaped gate nanowire FinFET; on-off current; surrounding gate FinFET; three-dimensional quantum correction simulation; turn-on resistance; Cities and towns; Computational modeling; Electric resistance; Electric variables; FETs; Fabrication; FinFETs; MOSFETs; Nanoscale devices; Quantum capacitance;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392325
