Title :
Three-dimensional simulation of single electron transistors
Author :
Fiori, G. ; Pala, M.G. ; Iannaccone, G.
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Univ. degli Studi di Pisa, Italy
Abstract :
We present a three-dimensional (3D) approach for the simulation of single electron transistor (SET) in which subregions with different types of confinement are present simultaneously. In particular, we have applied our model, based on the solution of the Schrodinger equation with DFT, to a split gate and a silicon on insulator (SOI) single electron transistor (SET). The solution of the Schrodinger equation with open boundary conditions has allowed us to compute the three-dimensional conductance in the linear response regime.
Keywords :
Schrodinger equation; discrete Fourier transforms; electrical conductivity; elemental semiconductors; semiconductor device models; silicon-on-insulator; single electron transistors; DFT; SOI; Schrodinger equation; Si; boundary conditions; silicon on insulator; single electron transistors; three dimensional conductance; three dimensional simulation; Boundary conditions; Capacitance; Density functional theory; Eigenvalues and eigenfunctions; Nanoelectronics; Poisson equations; Schrodinger equation; Silicon on insulator technology; Single electron transistors; Wave functions;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392343
