DocumentCode :
2534264
Title :
Plasmon resonances in terahertz photoconductivity
Author :
Horing, Norman J Morgenstem
Author_Institution :
Dept. of Phys. & Eng. Phys., Stevens Inst. of Technol., Hoboken, NJ, USA
fYear :
2004
fDate :
16-19 Aug. 2004
Firstpage :
368
Lastpage :
369
Abstract :
A dielectric response mechanism that is nonlinear in an incident THz field is proposed to explain the identity of dc photoconductivity and plasmon resonances in semiconductor nanostructures. The dc photoconductivity resonances match the plasmon resonances in semiconductors based on a nonlinear dynamic screening mechanism; albeit that the dc photoconductance is linear in the source-drain voltage.
Keywords :
dielectric function; nanostructured materials; photoconducting materials; photoconductivity; plasmons; semiconductor materials; dc photoconductivity resonances; dielectric response mechanism; nonlinear dynamic screening mechanism; plasmon resonances; semiconductor nanostructures; terahertz photoconductivity; Dielectrics; Frequency; Photoconductivity; Physics; Plasma sources; Plasma waves; Plasmons; Polarization; Resonance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
Type :
conf
DOI :
10.1109/NANO.2004.1392353
Filename :
1392353
Link To Document :
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