Title :
40 Gb/s optical modulation using monolithically chain integration of semiconductor optical amplifiers (SOA) and electroabsorption modulators (EAM)
Author :
Wu, Jui-Pin ; Yan, Hung-Jung ; Wu, Tsu-Hsiu ; Chiu, Yi-Jen
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
A 40 Gbs/s monolithically cascaded integration of SOAs and EAMs is fabricated and demonstrated. Using cascaded SOA-integrated EAM, 20 dB high extinction ratio in 2.5 V, 13 dB optical gain is observed in such device. As low as -10 dB microwave reflection (DC to 35 GHz) is observed, leading to 40 GHz of -3 dB bandwidth and 40 Gb/s performance.
Keywords :
electroabsorption; light absorption; optical modulation; semiconductor optical amplifiers; bit rate 40 Gbit/s; electroabsorption modulators; gain 13 dB; high extinction ratio; microwave reflection; monolithically cascaded integration; monolithically chain integration; optical gain; optical modulation; semiconductor optical amplifiers; voltage 2.5 V; Electrooptic modulators; Electrooptical waveguides; Extinction ratio; High speed optical techniques; Optical modulation; Optical pumping; Optical reflection; Optical waveguides; Semiconductor optical amplifiers; Semiconductor waveguides;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343207
