DocumentCode
2534371
Title
Determination of doping profile in sub-Debye-length region
Author
Toyabe, T. ; Matsuo, H. ; Yamamoto, S. ; Masuda, H.
fYear
1989
fDate
3-6 Dec. 1989
Firstpage
699
Lastpage
702
Abstract
A C-V fit method is proposed to determine the doping profile in shallow regions, of depth less than the extrinsic Debye length. The method has been incorporated in a process-device simulation system and applied to verification of the simulation of a 0.8- mu m-gate MOSFET. The doping profiles of these devices within 0.1 mu m (nearly equal to 2 lambda ) from the SiO/sub 2/ interface can be obtained by the C-V fit method, but not by the dC/dV or V/sub th/-V/sub sub/ methods or by secondary ion mass spectrometry (SIMS) measurement.<>
Keywords
doping profiles; insulated gate field effect transistors; semiconductor device models; semiconductor doping; 0.8 micron; C-V fit method; MOSFET; Si; SiO/sub 2/-Si; doping profile in shallow regions; doping profiles; extrinsic Debye length; process-device simulation system; shallow junctions; sub-Debye-length region; Capacitance measurement; Capacitance-voltage characteristics; Doping profiles; Erbium; Impurities; Laboratories; MOS capacitors; MOSFET circuits; Semiconductor devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1989.74375
Filename
74375
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