• DocumentCode
    2534373
  • Title

    Low voltage mach-zehnder modulator with InGaAs/InAlAs five layer asymmetric coupled quantum wells

  • Author

    Ushigome, M. ; Fukuoka, M. ; Arakawa, T. ; Tada, K.

  • Author_Institution
    Grad. Sch. of Eng., Yokohama Nat. Univ, Yokohama, Japan
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    434
  • Lastpage
    435
  • Abstract
    Modulation characteristics of FACQW MZ modulator grown by MBE were published. For a device with a 0.5-mm phase shifter and Y branches, the half-wave voltage of 2.3 V (VpiL = 1.2 Vmm) was successfully obtained.
  • Keywords
    III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical phase shifters; semiconductor quantum wells; InGaAs-InAlAs; Mach-Zehnder modulator; asymmetric coupled quantum wells; molecular beam epitaxy; phase shifter; voltage 2.3 V; Absorption; Erbium; Indium compounds; Indium gallium arsenide; Low voltage; Molecular beam epitaxial growth; Optical modulation; Phase modulation; Phase shifters; Wavelength division multiplexing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343208
  • Filename
    5343208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2534373