Carbon-based nanoelectronics: nanoICs with fullerenes

Author

Lyshevski, Sergey Edward

Author_Institution

Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

382

Lastpage

385

Abstract

Carbon-based electronic nanodevices can be utilized in interfaced, functional three-dimensional complexes that are able to perform computations, memories, information processing and other functions. The density of nanoICs fabricated using nanotechnology by millions of times exceeds the density of most advanced CMOS-based ICs. This paper reports design and analysis of nanoICs with fullerenes that proposed to be utilized as multi-terminal electronic nanodevices. Novel concepts to perform modeling, analysis and design of electronic nanodevices and 3DnanoICs are reported. High-fidelity modeling, heterogeneous simulation and data-intensive analysis are performed addressing 3DnanoICs CAD.

Keywords

CAD; CMOS integrated circuits; carbon; fullerene devices; fullerenes; integrated circuit design; integrated circuit modelling; nanoelectronics; 3D nanoIC; C; CAD; CMOS-based IC; carbon-based electronic nanodevices; carbon-based nanoelectronics; data-intensive analysis; fullerenes; heterogeneous simulation; information processing; memories; multiterminal electronic nanodevices; nanotechnology; three-dimensional complexes; Analytical models; Bonding; Consumer electronics; Design automation; Electronic mail; Microelectronics; Nanoelectronics; Nanoscale devices; Nanotechnology; Performance analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392358

Filename

1392358