Quantum simulation of nano-scale Schottky barrier MOSFETs

Author

Shin, Mincheol ; Jang, Moongyu ; Lee, Seonjae

Author_Institution

Sch. of Eng., Inf. & Commun. Univ., Daejeon, South Korea

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

396

Lastpage

398

Abstract

In this paper, SB-MOSFETs are investigated by solving the 2D Poisson equation self-consistently with the Schrodinger equation. The charge distributions were compared in the classical and quantum cases and the dependence of the channel threshold voltages on channel length and doping concentration were investigated. Schrodinger equations were solved self-consistently. The boundary conditions used in solving the Schrodinger equations were such that wave functions vanishes at the oxide-silicon interface and at z=D, where D is the depth of the simulated device.

Keywords

MOSFET; Poisson equation; Schottky barriers; Schrodinger equation; boundary-value problems; doping profiles; elemental semiconductors; nanoelectronics; semiconductor device models; semiconductor doping; silicon; wave functions; 2D Poisson equation; Schrodinger equation; Si; boundary conditions; channel length; channel threshold voltages; charge distributions; classical theory; doping concentration; nanoscale Schottky barrier MOSFET; oxide-silicon interface; quantum simulation; quantum theory; simulated device; wave functions; Boundary conditions; Doping; Electrons; MOSFETs; Nanoscale devices; Poisson equations; Schottky barriers; Schrodinger equation; Silicon; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392362

Filename

1392362