Title :
Quantum simulation of nano-scale Schottky barrier MOSFETs
Author :
Shin, Mincheol ; Jang, Moongyu ; Lee, Seonjae
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., Daejeon, South Korea
Abstract :
In this paper, SB-MOSFETs are investigated by solving the 2D Poisson equation self-consistently with the Schrodinger equation. The charge distributions were compared in the classical and quantum cases and the dependence of the channel threshold voltages on channel length and doping concentration were investigated. Schrodinger equations were solved self-consistently. The boundary conditions used in solving the Schrodinger equations were such that wave functions vanishes at the oxide-silicon interface and at z=D, where D is the depth of the simulated device.
Keywords :
MOSFET; Poisson equation; Schottky barriers; Schrodinger equation; boundary-value problems; doping profiles; elemental semiconductors; nanoelectronics; semiconductor device models; semiconductor doping; silicon; wave functions; 2D Poisson equation; Schrodinger equation; Si; boundary conditions; channel length; channel threshold voltages; charge distributions; classical theory; doping concentration; nanoscale Schottky barrier MOSFET; oxide-silicon interface; quantum simulation; quantum theory; simulated device; wave functions; Boundary conditions; Doping; Electrons; MOSFETs; Nanoscale devices; Poisson equations; Schottky barriers; Schrodinger equation; Silicon; Wave functions;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392362
