The tunneling field effect transistor (TFET) used in a single-event-upset (SEU) insensitive 6 transistor SRAM cell in ultra-low voltage applications

Author

Nirschl, Thomas ; Henzler, Stephan ; Pacha, Christian ; Wang, Peng-Fei ; Hansch, Walter ; Georgakos, Georg ; Schmitt-Landsiedel, Doris

Author_Institution

Inst. for Tech. Electron., Tech. Univ. Munich, Germany

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

402

Lastpage

404

Abstract

This paper discusses the 6 transistor SRAM cell based on the complementary tunneling field effect transistors (TFET). The low voltage characteristics of the cell are presented. The static noise margin (SNM) is used to compare the TFET cell with the standard CMOS memory cell. Furthermore the sensitivity versus single-event-upset (SEU) caused by radiation is investigated.

Keywords

SRAM chips; field effect transistors; integrated circuit noise; low-power electronics; radiation effects; tunnel transistors; SRAM cell; radiation effects; single event upset; static noise margin; tunneling field effect transistor cell; ultra-low voltage applications; CMOS technology; Doping profiles; Energy consumption; FETs; MOSFET circuits; Power supplies; Random access memory; Threshold voltage; Transistors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392364

Filename

1392364

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2534564