Title :
Physical modeling of RTD-based CNN cells
Author :
Hänggi, Martin ; Dogaru, Radu ; Chua, Leon O.
Author_Institution :
Nonlinear Electron. Lab., California Univ., Berkeley, CA, USA
Abstract :
Resonant tunneling diodes (RTDs) have intriguing properties which make them a primary nanoelectronic device for both analog and digital applications. We present a physics-based model of the RTD and study the universal cell circuit for Boolean CNNs which is proposed in a companion paper (Dogaru et al., 2000). In this circuit, the negative differential resistance of the RTD is fully exploited. Spice simulations confirm that it is capable of realizing a large class of linearly not separable Boolean functions
Keywords :
Boolean functions; SPICE; cellular neural nets; circuit simulation; nanotechnology; negative resistance circuits; neural chips; resonant tunnelling diodes; semiconductor device models; Boolean CNNs; RTD-based CNN cells; Spice simulations; negative differential resistance; physical modeling; primary nanoelectronic device; resonant tunneling diodes; universal cell circuit; Cellular neural networks; Circuits; Electron emission; Energy states; Nanoscale devices; Photonic band gap; Resonance; Resonant tunneling devices; Semiconductor diodes; Voltage;
Conference_Titel :
Cellular Neural Networks and Their Applications, 2000. (CNNA 2000). Proceedings of the 2000 6th IEEE International Workshop on
Conference_Location :
Catania
Print_ISBN :
0-7803-6344-2
DOI :
10.1109/CNNA.2000.876841
