Title :
Annealed InGaAs quantum dot thin p-clad laser diodes for integration
Author :
Lever, P. ; Buda, M. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
The properties of InGaAs quantum dot laser diodes, as-grown and annealed at 750°C for 30 sec, are discussed. Lasers with and without strain compensation layers are compared. The lasing spectra from the devices were broad with most devices lasing from an excited state. A large blueshift after annealing is observed.
Keywords :
III-V semiconductors; annealing; gallium arsenide; indium compounds; internal stresses; quantum dot lasers; spectral line shift; 30 sec; 750 degC; InGaAs; InGaAs quantum dot thin p-clad laser diodes; annealing; blueshift; excited state; lasing spectra; strain compensation layers; Capacitive sensors; Diode lasers; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Quantum dots; Rapid thermal annealing; Temperature; US Department of Transportation; Zinc;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392371
