Title :
A broadband 3D package for RF MEMS devices utilizing through silicon vias (TSV)
Author :
Lim, Y.Y. ; Chen, B.T. ; Yu, A.B. ; Shi, J.L.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
Packaging RF-MEMS devices require the parasitic effects of packaging to be minimal on the RF performance. In this paper, a 0-level packaging structure which utilizes TSVs in the cap wafer for electrical connection is proposed. To determine the RF performance of the package, transmission lines (CPW) were fabricated on high resistivity silicon (HRSi) substrates, and the grounding configuration optimized for. The package structures were based on actual RF-MEMS device layouts, which include test pads for DC biasing. A package loss of 0.1 dB was measured at 10 GHz. The RLGC parameters of TSVs in a GSG configuration were also extracted up to 12 GHz. Based on the transition, a 94-GHz antenna was also designed and characterized for.
Keywords :
broadband antennas; coplanar transmission lines; coplanar waveguides; integrated circuit interconnections; micromechanical devices; millimetre wave antennas; three-dimensional integrated circuits; wafer level packaging; CPW; DC biasing; GSG configuration; HRSi substrate; RF-MEMS device layouts; RLGC parameters; TSV; antenna design; broadband 3D package; coplanar waveguide; electrical connection; frequency 94 GHz; high resistivity silicon substrate; through silicon vias; transmission lines; Coplanar waveguides; Micromechanical devices; Packaging; Radio frequency; Silicon; Substrates; Through-silicon vias; Antenna; Grounding; Packaging; RF MEMS; TSV;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969489
