Title :
Investigations of thermocompression bonding with thin metal layers
Author :
Froemel, J. ; Baum, M. ; Wiemer, M. ; Roscher, F. ; Haubold, M. ; Jia, C. ; Gessner, T.
Author_Institution :
Fraunhofer ENAS, Chemnitz, Germany
Abstract :
In this study we successfully bonded silicon wafer substrates with metal based thermocompression technology. This technology has the advantage of inherent possibility of hermetic sealing and electrical contact. We used three different kinds of metals: gold, copper and aluminum. We will show the hermeticity, bonding strength and reliability of the different processes and compare the results.
Keywords :
aluminium; copper; gold; lead bonding; metallic thin films; tape automated bonding; Al; Au; Cu; Si; electrical contact; hermetic sealing; reliability; silicon wafer substrates; thermocompression bonding; thin film metal layer; Bonding; Copper; Crystals; Gold; Surface treatment; Bonded interface; MEMS; Thinf films; Wafer bonding;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969495
