DocumentCode
2534885
Title
Investigations of thermocompression bonding with thin metal layers
Author
Froemel, J. ; Baum, M. ; Wiemer, M. ; Roscher, F. ; Haubold, M. ; Jia, C. ; Gessner, T.
Author_Institution
Fraunhofer ENAS, Chemnitz, Germany
fYear
2011
fDate
5-9 June 2011
Firstpage
990
Lastpage
993
Abstract
In this study we successfully bonded silicon wafer substrates with metal based thermocompression technology. This technology has the advantage of inherent possibility of hermetic sealing and electrical contact. We used three different kinds of metals: gold, copper and aluminum. We will show the hermeticity, bonding strength and reliability of the different processes and compare the results.
Keywords
aluminium; copper; gold; lead bonding; metallic thin films; tape automated bonding; Al; Au; Cu; Si; electrical contact; hermetic sealing; reliability; silicon wafer substrates; thermocompression bonding; thin film metal layer; Bonding; Copper; Crystals; Gold; Surface treatment; Bonded interface; MEMS; Thinf films; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location
Beijing
ISSN
Pending
Print_ISBN
978-1-4577-0157-3
Type
conf
DOI
10.1109/TRANSDUCERS.2011.5969495
Filename
5969495
Link To Document