DocumentCode :
2534916
Title :
Interconnect and Device Scaling Trends in CMOS VLSI
Author :
Raol, Kartik
fYear :
2010
fDate :
20-22 Dec. 2010
Firstpage :
252
Lastpage :
252
Abstract :
Abstract form only given. This talk is an introductory survey of on-chip interconnect scaling trends in VLSI systems. Fundamental concepts related to on-chip interconnection with an emphasis on circuit design impact and process architecture are discussed. An overview of key evolving trends as reflected in the International Semiconductor Technology Roadmap for interconnect is presented. Some simple metrics that address system wireability and performance are introduced and an overview of challenges that need to be met to define optimal interconnect architectures is then reviewed. The presentation will provide insight into how interconnect architecture is designed and what some of the key tradeoff´s encountered are. Emerging trends such as 3D stacking, scattering mechanisms in wires and other challenges to continued scaling of interconnect are also reviewed. To better understand the relationship between wires and devices and their scaling trends, a brief review of basic CMOS transistor physics, device scaling trends and implications for design and performance is also covered. As scaling limitations for traditional CMOS devices is approached other emerging transistor architectures are also briefly discussed.
Keywords :
CMOS integrated circuits; VLSI; integrated circuit design; integrated circuit interconnections; 3D stacking; CMOS VLSI; CMOS transistor physics; device scaling; integrated circuit design; on-chip interconnect scaling; optimal interconnect architectures; system wireability; CMOS integrated circuits; Computer architecture; Integrated circuit interconnections; Integrated circuit modeling; Semiconductor device modeling; System-on-a-chip; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic System Design (ISED), 2010 International Symposium on
Conference_Location :
Bhubaneswar
Print_ISBN :
978-1-4244-8979-4
Electronic_ISBN :
978-0-7695-4294-2
Type :
conf
DOI :
10.1109/ISED.2010.66
Filename :
5715186
Link To Document :
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