Title :
Laser annealed SiGe devices for MEMS applications at temperatures below 250°C
Author :
El-Rifai, J. ; Sedky, S. ; Van Hoof, R. ; Severi, S. ; Lin, D. ; Puers, R. ; Van Hoof, C. ; Witvrouw, A.
Author_Institution :
imec, Leuven, Belgium
Abstract :
This work reports, for the first time, on the use of a post deposition laser annealing technique to realize SiGe MEMS devices at deposition temperatures as low as 210°C. It is demonstrated that by tuning the laser annealing conditions it is possible to realize SiGe devices with good electrical properties, including contact resistivity values to a TiN electrode as low as 4.9×10-7 Ωcm2, and good mechanical properties, with a strain gradient of -1.6×10-6 μm-1. Furthermore, this technique is used to fabricate an array of functional capacitive pressure sensors at low temperature.
Keywords :
CMOS integrated circuits; Ge-Si alloys; capacitive sensors; contact resistance; electrical resistivity; electrodes; laser beam annealing; laser tuning; microsensors; plasma CVD; pressure sensors; sensor arrays; titanium compounds; SiGe-TiN; capacitive pressure sensor array; contact resistivity; electrical properties; electrode; mechanical properties; microelectromechanical system; post deposition laser annealing technique; silicon-germanium MEMS device; strain gradient; Annealing; Conductivity; Lasers; Micromechanical devices; Plasma temperature; Silicon germanium; Strain; CMOS post-processing; Laser annealing; Silicon Germanium; amorphous materials; contact resistance; low thermal budget; strain gradient;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969499
