• DocumentCode
    2535067
  • Title

    Wafer-level thin film vacuum packages for MEMS using nanoporous anodic alumina membranes

  • Author

    Zekry, J. ; Tezcan, D.S. ; Celis, J.-P. ; Puers, R. ; Van Hoof, C. ; Tilmans, H.A.C.

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2011
  • fDate
    5-9 June 2011
  • Firstpage
    974
  • Lastpage
    977
  • Abstract
    This paper reports on a wafer-level thin film vacuum packaging technology for MEMS. It is based on the fabrication of freestanding porous anodic alumina membranes of a typical thickness of 2 to 3μm, featuring cylindrical nanopores that are a mere 15-20nm in diameter (aspect ratio >;100). The fabrication process involves in situ perforation of the thin AlOx barrier layer present at the bottom of the nanoporous membranes. For the present paper, a silicon oxide sacrificial layer and a vapor-phase HF release etch through the pores are utilized. The thin film packages are next sealed with a 4μm-thick PECVD nitride layer. Strong and “air-tight” thin film packages are obtained this way. Negligible impact on the RF transmission losses (up to 67GHz) is observed. A basic assessment of the package hermeticity based on the cap deflection method is also presented.
  • Keywords
    membranes; microfabrication; micromechanical devices; nanoporous materials; thin films; wafer level packaging; MEMS; PECVD nitride layer; RF transmission loss; fabrication process; freestanding porous anodic alumina membrane; nanoporous anodic alumina membrane; nanoporous membranes; size 15 nm to 20 nm; size 2 mum to 3 mum; size 4 mum; vapor-phase HF release etch; wafer-level thin film vacuum package; Atmospheric measurements; Cavity resonators; Fabrication; Helium; Micromechanical devices; Packaging; Radio frequency; MEMS packaging; RF-MEMS; hermeticity; porous anodic alumina; wafer-level encapsulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
  • Conference_Location
    Beijing
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-0157-3
  • Type

    conf

  • DOI
    10.1109/TRANSDUCERS.2011.5969507
  • Filename
    5969507