DocumentCode :
2535067
Title :
Wafer-level thin film vacuum packages for MEMS using nanoporous anodic alumina membranes
Author :
Zekry, J. ; Tezcan, D.S. ; Celis, J.-P. ; Puers, R. ; Van Hoof, C. ; Tilmans, H.A.C.
Author_Institution :
Imec, Leuven, Belgium
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
974
Lastpage :
977
Abstract :
This paper reports on a wafer-level thin film vacuum packaging technology for MEMS. It is based on the fabrication of freestanding porous anodic alumina membranes of a typical thickness of 2 to 3μm, featuring cylindrical nanopores that are a mere 15-20nm in diameter (aspect ratio >;100). The fabrication process involves in situ perforation of the thin AlOx barrier layer present at the bottom of the nanoporous membranes. For the present paper, a silicon oxide sacrificial layer and a vapor-phase HF release etch through the pores are utilized. The thin film packages are next sealed with a 4μm-thick PECVD nitride layer. Strong and “air-tight” thin film packages are obtained this way. Negligible impact on the RF transmission losses (up to 67GHz) is observed. A basic assessment of the package hermeticity based on the cap deflection method is also presented.
Keywords :
membranes; microfabrication; micromechanical devices; nanoporous materials; thin films; wafer level packaging; MEMS; PECVD nitride layer; RF transmission loss; fabrication process; freestanding porous anodic alumina membrane; nanoporous anodic alumina membrane; nanoporous membranes; size 15 nm to 20 nm; size 2 mum to 3 mum; size 4 mum; vapor-phase HF release etch; wafer-level thin film vacuum package; Atmospheric measurements; Cavity resonators; Fabrication; Helium; Micromechanical devices; Packaging; Radio frequency; MEMS packaging; RF-MEMS; hermeticity; porous anodic alumina; wafer-level encapsulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969507
Filename :
5969507
Link To Document :
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