Title :
High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared
Author :
Okyay, Ali K. ; Onbasli, M. Cengiz ; Ercan, Burcu ; Yu, Hyun-Yong ; Ren, Shen ; Miller, David A B ; Saraswat, Krishna C. ; Nayfeh, Ammar M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
Abstract :
Monolithic germanium photodetectors integrated on Si with external efficiency up to 68% at 1550 nm and low dark current density 3.2 mA/cm2 are demonstrated. The absorption edge red shifted by 47 nm corresponding to bandgap energy reduced by 24 meV.
Keywords :
germanium; integrated optoelectronics; monolithic integrated circuits; photodetectors; red shift; silicon; Ge-Si; absorption edge red shift; bandgap energy; efficiency 68 percent; integrated optoelectronics; monolithic photodetectors; near infrared; wavelength 1550 nm; wavelength 47 nm; CMOS technology; Dark current; Germanium; Integrated optoelectronics; Optical films; Photodetectors; Photonic band gap; Silicon; Substrates; Tensile strain;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343246
