Self assembly of nanowires array with lattice directional growth

Author

Hao Lin

Author_Institution

Dept. of Appl. Phys., Cornell Univ., Ithaca, NY, USA

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

459

Lastpage

461

Abstract

In this paper, 2D arrays of silicide nanowires have been grown with preferred orientations on silicon substrate of both Si(100) surface and Si(111) surface along with carbon nanotubes by using chemical vapor deposition (CVD). The two-fold growth symmetry on Si(100) and three-fold growth symmetry on Si(111) surface suggest the substrate lattice epitaxial growth mechanism. The nanowires and carbon nanotubes are characterized ex situ with scanning electron microscope and atomic force microscope and the lengths of nanowires are shown to range from several hundreds of nanometer to more than 2 micron.

Keywords

atomic force microscopy; carbon nanotubes; chemical vapour deposition; epitaxial layers; nanotechnology; nanowires; scanning electron microscopy; self-assembly; texture; vapour phase epitaxial growth; C; CVD; Si; Si(100) surface; Si(111) surface; atomic force microscopy; carbon nanotubes; chemical vapor deposition; lattice directional growth; preferred orientation; scanning electron microscopy; self assembly; silicide nanowire 2D arrays; silicon substrate; substrate lattice epitaxial growth mechanism; three-fold growth symmetry; two-fold growth symmetry; Atomic force microscopy; Carbon nanotubes; Chemical vapor deposition; Lattices; Nanowires; Scanning electron microscopy; Self-assembly; Silicides; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392385

Filename

1392385