Conformal coating of poly(glycidyl methacrylate) as a lithographic polymer by initiated chemical vapor deposition

This study reports on the investigation of the conformability and photo and electron beam (EB) patternability of a poly-glycidyl methacrylate (PGMA) film formed by initiated chemical vapor deposition (i-CVD). It is demonstrated that the PGMA film can be conformally deposited on a Si trench structure via i-CVD. In addition, the pattern definition of the film is also successfully demonstrated by deep ultraviolet and EB lithography. These achievements indicate that i-CVD has the potential to become a powerful method to achieve the conformal coating of a lithographic resist.