Title :
Quantized conductance in an in-plane gated In0.53Ga0.47As quantum point contact
Author :
Beyer, Andre ; Ferry, David K.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
We report quantized conductance in a 500 nm wide In0.53Ga0.47As quantum point contact defined by 100 nm wide trenches. The surrounding two-dimensional electron gas was used as gate. Electron beam lithography and reactive ion etching with BCl3 formed the trenches. Quantized conductance in steps of 2e2/h as well as one additional step at 0.7(2e2/h) was observed at 4.8 K. Conductance oscillations superimpose the plateaus at 0.3 K. A possible explanation for these resonance structures is a quantum interference of electron waves between the boundaries to the two-dimensional source and drain region.
Keywords :
III-V semiconductors; aluminium compounds; current fluctuations; electric admittance; electron beam lithography; electron waveguides; gallium arsenide; indium compounds; nanotechnology; quantum point contacts; sputter etching; two-dimensional electron gas; 0.3 K; 100 nm; 4.8 K; 500 nm; InGaAs-InAlAs; electron beam lithography; electron waves; in-plane gated In0.53Ga0.47As quantum point contact; quantized conductance; quantized conductance oscillation; quantum interference; reactive ion etching; resonance structures; two-dimensional electron gas; two-dimensional source-drain boundaries; Annealing; Contacts; Electrons; Electrostatics; Etching; Indium gallium arsenide; Lithography; Optical buffering; Optical pumping; Optical scattering;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392395
