Title :
Semiconductor optical amplifiers
Author :
Verdiell, J.M. ; Ziari, M. ; Mathur, A.
Author_Institution :
SDL, San Jose, CA, USA
Abstract :
Polarization insensitive semiconductor amplifiers are important devices for many applications. Their small size, high-gain, and ability to be turned on and off fast offer interesting possibilities for photonic switches. We have used a design to implement polarization insensitivity. Quantum wells of alternative compressive and tensile direction of strained are stacked up in the active region. Compressively strained layers provide TE gain through electron-heavy hole recombinations, while tensile strained wells provide predominantly TM gain through electron to light hole recombinations. Amplifiers can be fabricated at both 1.3 and 1.5 /spl mu/m wavelength.
Keywords :
electron-hole recombination; laser noise; laser transitions; light polarisation; optical transmitters; quantum well lasers; semiconductor device noise; 1.3 mum; 1.5 mum; TE gain; TM gain; active region; compressive strain; electron to light hole recombinations; electron-heavy hole recombinations; high-gain; photonic switches; polarization insensitive semiconductor amplifiers; polarization insensitivity; semiconductor optical amplifiers; small size; tensile strained; tensile strained wells; Noise figure; Optical amplifiers; Optical fiber polarization; Optical switches; Power amplifiers; Power generation; Radiative recombination; Semiconductor optical amplifiers; Spontaneous emission; Tellurium;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571522