DocumentCode
2535559
Title
Semiconductor optical amplifiers
Author
Verdiell, J.M. ; Ziari, M. ; Mathur, A.
Author_Institution
SDL, San Jose, CA, USA
Volume
2
fYear
1996
fDate
18-21 Nov. 1996
Firstpage
9
Abstract
Polarization insensitive semiconductor amplifiers are important devices for many applications. Their small size, high-gain, and ability to be turned on and off fast offer interesting possibilities for photonic switches. We have used a design to implement polarization insensitivity. Quantum wells of alternative compressive and tensile direction of strained are stacked up in the active region. Compressively strained layers provide TE gain through electron-heavy hole recombinations, while tensile strained wells provide predominantly TM gain through electron to light hole recombinations. Amplifiers can be fabricated at both 1.3 and 1.5 /spl mu/m wavelength.
Keywords
electron-hole recombination; laser noise; laser transitions; light polarisation; optical transmitters; quantum well lasers; semiconductor device noise; 1.3 mum; 1.5 mum; TE gain; TM gain; active region; compressive strain; electron to light hole recombinations; electron-heavy hole recombinations; high-gain; photonic switches; polarization insensitive semiconductor amplifiers; polarization insensitivity; semiconductor optical amplifiers; small size; tensile strained; tensile strained wells; Noise figure; Optical amplifiers; Optical fiber polarization; Optical switches; Power amplifiers; Power generation; Radiative recombination; Semiconductor optical amplifiers; Spontaneous emission; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-3160-5
Type
conf
DOI
10.1109/LEOS.1996.571522
Filename
571522
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