• DocumentCode
    2535559
  • Title

    Semiconductor optical amplifiers

  • Author

    Verdiell, J.M. ; Ziari, M. ; Mathur, A.

  • Author_Institution
    SDL, San Jose, CA, USA
  • Volume
    2
  • fYear
    1996
  • fDate
    18-21 Nov. 1996
  • Firstpage
    9
  • Abstract
    Polarization insensitive semiconductor amplifiers are important devices for many applications. Their small size, high-gain, and ability to be turned on and off fast offer interesting possibilities for photonic switches. We have used a design to implement polarization insensitivity. Quantum wells of alternative compressive and tensile direction of strained are stacked up in the active region. Compressively strained layers provide TE gain through electron-heavy hole recombinations, while tensile strained wells provide predominantly TM gain through electron to light hole recombinations. Amplifiers can be fabricated at both 1.3 and 1.5 /spl mu/m wavelength.
  • Keywords
    electron-hole recombination; laser noise; laser transitions; light polarisation; optical transmitters; quantum well lasers; semiconductor device noise; 1.3 mum; 1.5 mum; TE gain; TM gain; active region; compressive strain; electron to light hole recombinations; electron-heavy hole recombinations; high-gain; photonic switches; polarization insensitive semiconductor amplifiers; polarization insensitivity; semiconductor optical amplifiers; small size; tensile strained; tensile strained wells; Noise figure; Optical amplifiers; Optical fiber polarization; Optical switches; Power amplifiers; Power generation; Radiative recombination; Semiconductor optical amplifiers; Spontaneous emission; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
  • Conference_Location
    Boston, MA, USA
  • Print_ISBN
    0-7803-3160-5
  • Type

    conf

  • DOI
    10.1109/LEOS.1996.571522
  • Filename
    571522