Title :
Evaluation of gain saturation behaviour in travelling wave semiconductor amplifiers
Author :
Kim, In ; Uppal, Kushant ; Dapkus, P.Daniel
Author_Institution :
Nat. Center for Integrated Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
In this paper, we describe a more accurate method to calculate the gain saturation behavior in a QW semiconductor laser traveling wave amplifier. Solving the rate equation for the carrier density in its steady state condition in conjunction with the gain and recombination rate calculated using Kane-type Hamiltonian, a rigorous relation is derived for the gain saturation behavior with increasing photon density.
Keywords :
carrier density; laser theory; optical saturation; optical transmitters; quantum well lasers; semiconductor device models; 1.3 mum; Kane-type Hamiltonian; QW semiconductor laser traveling wave amplifier; accurate method; carrier density; gain saturation behavior; gain saturation behaviour; laser theory; photon density; rate equation; recombination rate; steady state condition; travelling wave semiconductor amplifiers; Gain; Operational amplifiers; Optical amplifiers; Optical saturation; Photonics; Power amplifiers; Power generation; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571523
