DocumentCode
2535904
Title
A systematic approach to dark current reduction in InGaAs-based photodiode arrays for shortwave infrared imaging
Author
Onat, Bora M. ; Jiang, Xudong ; Itzler, Mark
Author_Institution
Princeton Lightwave Inc., Cranbury, NJ, USA
fYear
2009
fDate
4-8 Oct. 2009
Firstpage
231
Lastpage
232
Abstract
The goal of this study is to present a systematic approach to reduce dark current in InGaAs based SWIR imaging arrays. We achieved a factor of 10 reduction of dark current compared to our standard processing with improved uniformity and a factor of ~2.5 reduction than previous state of the art.
Keywords
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared imaging; photodiodes; InGaAs; dark current reduction; photodiode arrays; shortwave infrared imaging; Dark current; Indium gallium arsenide; Indium phosphide; Infrared imaging; Optical arrays; Photodiodes; Silicon; Sorting; Temperature sensors; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location
Belek-Antalya
ISSN
1092-8081
Print_ISBN
978-1-4244-3680-4
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2009.5343289
Filename
5343289
Link To Document