DocumentCode :
2535904
Title :
A systematic approach to dark current reduction in InGaAs-based photodiode arrays for shortwave infrared imaging
Author :
Onat, Bora M. ; Jiang, Xudong ; Itzler, Mark
Author_Institution :
Princeton Lightwave Inc., Cranbury, NJ, USA
fYear :
2009
fDate :
4-8 Oct. 2009
Firstpage :
231
Lastpage :
232
Abstract :
The goal of this study is to present a systematic approach to reduce dark current in InGaAs based SWIR imaging arrays. We achieved a factor of 10 reduction of dark current compared to our standard processing with improved uniformity and a factor of ~2.5 reduction than previous state of the art.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared imaging; photodiodes; InGaAs; dark current reduction; photodiode arrays; shortwave infrared imaging; Dark current; Indium gallium arsenide; Indium phosphide; Infrared imaging; Optical arrays; Photodiodes; Silicon; Sorting; Temperature sensors; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
ISSN :
1092-8081
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2009.5343289
Filename :
5343289
Link To Document :
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