Title :
A novel structure of delta-strained quantum well for polarization insensitive semiconductor devices at 1.55 /spl mu/m
Author :
Hovinen, M. ; Gopalan, B. ; Johnson, F.G. ; Dagenais, M.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
This report gives the preliminary results of using a three monolayer GaAs layer in a lattice matched InGaAs quantum well. Referring to earlier work on thin strained layers, we choose to call this a delta-strained quantum well structure. One of the important advantages of this novel structure is the ease of MBE growth.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; laser transitions; light polarisation; molecular beam epitaxial growth; monolayers; optical films; optical transmitters; quantum well lasers; semiconductor growth; sensitivity; 1.55 mum; GaAs; InGaAs; MBE growth; delta-strained quantum well; lattice matched InGaAs quantum well; monolayer GaAs layer; optical transmitters; polarization insensitive semiconductor devices; quantum well lasers; semiconductor growth; semiconductor optical amplifiers; thin strained layers; Bandwidth; Gallium arsenide; Lattices; Optical amplifiers; Optical polarization; Semiconductor devices; Semiconductor optical amplifiers; Stimulated emission; Tellurium; Tensile strain;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571524
