A novel structure of delta-strained quantum well for polarization insensitive semiconductor devices at 1.55 /spl mu/m

Author

Hovinen, M. ; Gopalan, B. ; Johnson, F.G. ; Dagenais, M.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

13

Abstract

This report gives the preliminary results of using a three monolayer GaAs layer in a lattice matched InGaAs quantum well. Referring to earlier work on thin strained layers, we choose to call this a delta-strained quantum well structure. One of the important advantages of this novel structure is the ease of MBE growth.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser modes; laser transitions; light polarisation; molecular beam epitaxial growth; monolayers; optical films; optical transmitters; quantum well lasers; semiconductor growth; sensitivity; 1.55 mum; GaAs; InGaAs; MBE growth; delta-strained quantum well; lattice matched InGaAs quantum well; monolayer GaAs layer; optical transmitters; polarization insensitive semiconductor devices; quantum well lasers; semiconductor growth; semiconductor optical amplifiers; thin strained layers; Bandwidth; Gallium arsenide; Lattices; Optical amplifiers; Optical polarization; Semiconductor devices; Semiconductor optical amplifiers; Stimulated emission; Tellurium; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571524

Filename

571524