Title :
Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors
Author :
Bütün, Serkan ; Gökkavas, Mutlu ; Yu, HongBo ; Strupinski, Vlodek ; Özbay, Ekmel
Author_Institution :
Nanoteknoloji Arastima Merkezi, Bilkent Univ., Ankara, Turkey
Abstract :
Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates.
Keywords :
III-V semiconductors; gallium compounds; photodetectors; silicon compounds; ultraviolet detectors; wide band gap semiconductors; GaN; SiC; dark current reduction; epitaxially thick templates; metal-semiconductor-metal photodetectors; semiinsulating templates; ultraviolet photodetectors; wide band gap semiconductors; Chemical vapor deposition; Dark current; Epitaxial growth; Gallium nitride; Lighting; Materials science and technology; Organic chemicals; Photodetectors; Silicon carbide; Wide band gap semiconductors;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343292
