Effective electrostatic discharge protection circuit design using novel full-silicided N-MOSFETs in sub-100 nm era

In this paper, the floating charge effect is considered in the design of new full-silicided NMOSFETs for designing electrostatic discharge (ESD) protection nanocircuit. The new full-silicided ESD protection devices are designed, fabricated, and studied; our investigation demonstrates significantly the improvement of sustaining ESD robustness than that of the conventional full-silicided device. Furthermore, it has an excellent electrical efficiency than those of drain ballast resistor tied devices. Moreover, our novel design avoid the unexpected floating charge effects during the normally operation conditions.