Modeling and analysis of carbon nanotube interconnects and their effectiveness for high speed VLSI design

Author

Raychowdhury, Arijit ; Roy, Kaushik

Author_Institution

Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

608

Lastpage

610

Abstract

Semiconducting carbon nanotubes (CNTs) have gained immense popularity as possible successors to silicon as the channel material for ultra high performance field effect transistors. On the other hand, their metallic counterparts have often been regarded as ideal interconnects for the future technology generations. Owing to their high current densities and increased reliability, metallic-single walled CNTs (SWCNTs) have been of fundamental research both in theory as well as experiments. Metallic CNTs have been modeled for RF applications using an LC model. In this paper, we present an efficient circuit compatible RLC model for metallic SWCNTs, and analyze the impact of SWCNTs on the performance of ultra scaled digital VLSI design.

Keywords

ULSI; VLSI; carbon nanotubes; current density; digital integrated circuits; high-speed integrated circuits; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; semiconductor materials; C; RF applications; RLC model; channel material; current density; field effect transistors; integrated circuit interconnections; metallic-single walled CNT; reliability; semiconducting carbon nanotube interconnects; ultra scaled digital VLSI design; Carbon nanotubes; Current density; FETs; Integrated circuit interconnections; Organic materials; Reliability theory; Semiconductivity; Semiconductor materials; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392435

Filename

1392435