A Frenkel-Poole model of dielectric charging in CMOS MEMS

Author

Dorsey, K.L. ; Fedder, G.K.

Author_Institution

Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA

fYear

2011

fDate

5-9 June 2011

Firstpage

823

Lastpage

826

Abstract

Electrostatic actuation is commonly used for MEMS devices such as resonators, sensors, and RF switches, but parasitic charge in the dielectric layers of the devices may cause performance issues (e.g., drift, pull-in) or decreased device lifetime. We present a precise predictive model of dielectric charging in a CMOS MEMS resonator using Frenkel-Poole conduction. The model is able to predict frequency drift within 5% of measured drift data. Use of these predictive models will lead to electrostatically actuated MEMS devices with increased stability.

Keywords

CMOS integrated circuits; Poole-Frenkel effect; micromechanical resonators; CMOS MEMS resonator; Frenkel-Poole conduction; RF switches; dielectric charging; dielectric layers; electrostatic actuation; parasitic charge; resonators; sensors; CMOS integrated circuits; Dielectrics; Micromechanical devices; Resonant frequency; Semiconductor device modeling; Stators; Temperature measurement; CMOS MEMS; Frenkel Poole; parasitic charging;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969595

Filename

5969595