DocumentCode :
2536382
Title :
A Frenkel-Poole model of dielectric charging in CMOS MEMS
Author :
Dorsey, K.L. ; Fedder, G.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
823
Lastpage :
826
Abstract :
Electrostatic actuation is commonly used for MEMS devices such as resonators, sensors, and RF switches, but parasitic charge in the dielectric layers of the devices may cause performance issues (e.g., drift, pull-in) or decreased device lifetime. We present a precise predictive model of dielectric charging in a CMOS MEMS resonator using Frenkel-Poole conduction. The model is able to predict frequency drift within 5% of measured drift data. Use of these predictive models will lead to electrostatically actuated MEMS devices with increased stability.
Keywords :
CMOS integrated circuits; Poole-Frenkel effect; micromechanical resonators; CMOS MEMS resonator; Frenkel-Poole conduction; RF switches; dielectric charging; dielectric layers; electrostatic actuation; parasitic charge; resonators; sensors; CMOS integrated circuits; Dielectrics; Micromechanical devices; Resonant frequency; Semiconductor device modeling; Stators; Temperature measurement; CMOS MEMS; Frenkel Poole; parasitic charging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969595
Filename :
5969595
Link To Document :
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