Title :
New double charge-pumping circuit for high-voltage generation
Author :
Nozaki, Masahiko ; Tangsrirar, W. ; Suzuki, Yasoji ; Yoshid, M. ; Saitoh, Shin´ichi ; Teramoto, Mitsuo ; Yamaguchi, Akira
Author_Institution :
Dept. of Commun. Eng., Tokai Univ., Hiratsuka City, Japan
Abstract :
We have proposed a double charge-pumping circuit composed of PMOS transistors. The circuit does not suffer from the threshold voltage loss of the PMOS transistors. Therefore, the circuit can generate a high voltage which is proportional to the number of pumping stages. Computer simulation was applied to a 24-stage circuit. As a result, the output voltage of the circuit was as high as +20 V under the condition of VDD=+ 1 V
Keywords :
MOS integrated circuits; electric charge; voltage multipliers; 1 V; 20 V; 24-stage circuit; HV generation; PMOS transistors; PMOSFET; double charge-pumping circuit; high-voltage generation; Charge pumps; Circuits; Clocks; Computational modeling; Large scale integration; MOS devices; MOSFETs; Nonvolatile memory; Power supplies; Threshold voltage;
Conference_Titel :
Circuits and Systems, 1998. IEEE APCCAS 1998. The 1998 IEEE Asia-Pacific Conference on
Conference_Location :
Chiangmai
Print_ISBN :
0-7803-5146-0
DOI :
10.1109/APCCAS.1998.743922
