CMOS pixel-level ADC with change detection

Author

Chi, Yu M. ; Mallik, Udayan ; Choi, Edward ; Clapp, Matthew ; Gauwenberghs, Gert ; Etienne-Cummings, Ralph

Author_Institution

Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD

fYear

2006

fDate

21-24 May 2006

Lastpage

1650

Abstract

An array of 90 times 90 active pixel sensors (APS) that performs both in-pixel temporal intensity change detection and analog-to-digital conversion is presented. The 6-T 3-C 25mum times 25mum pixel fabricated on a 0.5mum 3M2P CMOS process provides a digital output of light intensity via an integrated single slope ADC. Using the programmable threshold of the pixel level comparator, the imager acquires two exposure levels of a scene simultaneously for increased dynamic range. The imager is intended for surveillance network applications requiring low cost, power efficient sensors remotely operating over bandwidth constrained networks

Keywords

CMOS image sensors; analogue-digital conversion; comparators (circuits); programmable circuits; 0.5 micron; 25 micron; CMOS pixel sensor; analog-to-digital conversion; bandwidth constrained networks; integrated ADC; intensity change detection; pixel level comparator; power efficient sensors; programmable threshold; surveillance network; Analog-digital conversion; Bandwidth; CMOS process; Costs; Dynamic range; Image sensors; Layout; Pixel; Sensor arrays; Surveillance;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on

Conference_Location

Island of Kos

Print_ISBN

0-7803-9389-9

Type

conf

DOI

10.1109/ISCAS.2006.1692918

Filename

1692918