Title :
CMOS pixel-level ADC with change detection
Author :
Chi, Yu M. ; Mallik, Udayan ; Choi, Edward ; Clapp, Matthew ; Gauwenberghs, Gert ; Etienne-Cummings, Ralph
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD
Abstract :
An array of 90 times 90 active pixel sensors (APS) that performs both in-pixel temporal intensity change detection and analog-to-digital conversion is presented. The 6-T 3-C 25mum times 25mum pixel fabricated on a 0.5mum 3M2P CMOS process provides a digital output of light intensity via an integrated single slope ADC. Using the programmable threshold of the pixel level comparator, the imager acquires two exposure levels of a scene simultaneously for increased dynamic range. The imager is intended for surveillance network applications requiring low cost, power efficient sensors remotely operating over bandwidth constrained networks
Keywords :
CMOS image sensors; analogue-digital conversion; comparators (circuits); programmable circuits; 0.5 micron; 25 micron; CMOS pixel sensor; analog-to-digital conversion; bandwidth constrained networks; integrated ADC; intensity change detection; pixel level comparator; power efficient sensors; programmable threshold; surveillance network; Analog-digital conversion; Bandwidth; CMOS process; Costs; Dynamic range; Image sensors; Layout; Pixel; Sensor arrays; Surveillance;
Conference_Titel :
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location :
Island of Kos
Print_ISBN :
0-7803-9389-9
DOI :
10.1109/ISCAS.2006.1692918
