Improved Carrier Distributions by Varying Barrier Thickness for InGaN/GaN LEDs

Author

Yu, S.F. ; Ray-Ming Lin ; Chang, S.J. ; Chen, J.R. ; Chu, J.Y. ; Kuo, C.T. ; Jiao, Z.Y.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

9

Issue

4

fYear

2013

fDate

Apr-13

Firstpage

239

Lastpage

243

Abstract

In this paper, we minimized efficiency droop by varying barrier thickness for InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs improved by 18% at a current density of 200 A·cm^-2, compared to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier distribution resulting from the presence of NQBs was practically approved from another experimental design in this study. We suggest that the NQBs displayed uniform carrier distribution in active layer and decreased the carrier density in the active layer at a critical current density.

Keywords

III-V semiconductors; carrier density; current density; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; EQE; InGaN-GaN; LED; MWQ; NQB; active layer; barrier thickness variation; carrier distribution; critical current density; current density; external quantum efficiency; light emitting diode; multiquantum well; narrow quantum barrier; Current density; Gallium nitride; Light emitting diodes; Quantum well devices; Radiative recombination; Solid state lighting; Droop; InGaN; LEDs; narrow quantum barriers;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2012.2205367

Filename

6243151