Title :
Improved Carrier Distributions by Varying Barrier Thickness for InGaN/GaN LEDs
Author :
Yu, S.F. ; Ray-Ming Lin ; Chang, S.J. ; Chen, J.R. ; Chu, J.Y. ; Kuo, C.T. ; Jiao, Z.Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this paper, we minimized efficiency droop by varying barrier thickness for InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs improved by 18% at a current density of 200 A·cm-2, compared to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier distribution resulting from the presence of NQBs was practically approved from another experimental design in this study. We suggest that the NQBs displayed uniform carrier distribution in active layer and decreased the carrier density in the active layer at a critical current density.
Keywords :
III-V semiconductors; carrier density; current density; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; EQE; InGaN-GaN; LED; MWQ; NQB; active layer; barrier thickness variation; carrier distribution; critical current density; current density; external quantum efficiency; light emitting diode; multiquantum well; narrow quantum barrier; Current density; Gallium nitride; Light emitting diodes; Quantum well devices; Radiative recombination; Solid state lighting; Droop; InGaN; LEDs; narrow quantum barriers;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2012.2205367
