Title :
Injection-photon annealing of radiation induced defects during heterostructure concentrator solar cells operation
Author :
Andreev, V.M. ; Kalinovskii, V.S. ; Larionov, R. ; Rumyantsev, D. ; Sulima, O.V.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., Leningrad, USSR
Abstract :
An improvement of the p-AlGaAs-p-GaAs-n-GaAs solar cells (SC) by decreasing the p-GaAs and p-AlGaAs thicknesses up to 0.3 μm and 100 Å, respectively, is discussed. The drop in photocurrent in the SC after 6.7 MeV proton bombardment at a dose of 6×1012 cm -2 was less than 10%. Additional ways to decrease the concentration of radiation-induced defects in the SC are injection (due to current flow) and photon (due to photoexcitation) annealing. These processes have been realized during operating of SC converting 15-100-fold concentrated sunlight
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium arsenide; radiation effects; solar cells; solar energy concentrators; 0.3 micron; 100 Å; 15-100-fold concentrated sunlight; 6.7 MeV; AlGaAs-GaAs solar cells; SC; current flow; heterostructure concentrator; injection-photon annealing; photoexcitation; proton bombardment; radiation induced defects; semiconductor; Annealing; Degradation; Electroluminescence; Photoconductivity; Photonic band gap; Photovoltaic cells; Protection; Protons; Solar power generation; Temperature;
Conference_Titel :
Energy Conversion Engineering Conference, 1989. IECEC-89., Proceedings of the 24th Intersociety
Conference_Location :
Washington, DC
DOI :
10.1109/IECEC.1989.74393
