Title :
A 10GHz 8-bit Direct Digital Synthesizer implemented in GaAs HBT technology
Author :
Chen, Gaopeng ; Wu, Danyu ; Jin, Zhi ; Wu, Jin ; Liu, Xinyu
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
This paper presents a 10GHz 8-bit Direct Digital Synthesizer (DDS) Microwave Monolithic Integrated Circuit (MMIC) implemented in 1μm GaAs HBT technology. The DDS takes a Double-Edge-Trigger (DET) 8-stage pipeline accumulator with sine-weighted DAC based ROM-less architecture, that can maximize the utilization ratio of GaAs HBT´s high-speed potential. With an output frequency up to 5GHz, the DDS gives an average Spurious Free Dynamic Range (SFDR) of 23.24dBc through the first Nyquist band, and consumes 2.4W of DC power from a single -4.6V DC supply. Using 1651 GaAs HBT transistors, the total area of the DDS chip is 2.4×2.0mm2.
Keywords :
MMIC; direct digital synthesis; heterojunction bipolar transistors; 8-stage pipeline accumulator; HBT technology; HBT transistors; Nyquist band; ROM-less architecture; direct digital synthesizer; double-edge-trigger; frequency 10 GHz; heterojunction bipolar transistors; microwave monolithic integrated circuit; power 2.4 W; sine-weighted DAC; size 1 mum; spurious free dynamic range; voltage -4.6 V; word length 8 bit; Dynamic range; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Microwave technology; Monolithic integrated circuits; Pipelines; Synthesizers; Accumulator; Double-Edge-Trigger; Gallium Arsenide (GaAs); ROM-less DDS; digital to analog converter (DAC); digital-to-analog converter (DAC); direct digital frequency synthesizer (DDFS); direct digital synthesizer (DDS); heterojunction bipolar transistor (HBT);
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6240-7
DOI :
10.1109/RFIC.2010.5477248
