Title :
Barrier width and growth temperature effect in InP/AlGaInP quantum dot lasers
Author :
Al-Ghamdi, M.S. ; Smowton, P.M. ; Shutts, S. ; Blood, P. ; Krysa, A.B.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
We investigate growth and wafer design improvements with two barrier widths each grown at different temperatures to optimise room temperature threshold current density for 2 mm long lasers with uncoated facets. We explain this using sophisticated optical and electrical characterisation.
Keywords :
aluminium compounds; gallium compounds; indium compounds; quantum dot lasers; InP-AlGaInP; barrier width effect; growth temperature effect; quantum dot lasers; Absorption; Epitaxial growth; Fiber lasers; Indium phosphide; Land surface temperature; Laser theory; Physics; Quantum dot lasers; Spontaneous emission; Threshold current;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343356
