DocumentCode :
2537102
Title :
InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm
Author :
Schlosser, Peter J. ; Hastie, Jennifer E. ; Calvez, Stephane ; Krysa, Andrey B. ; Dawson, Martin D.
Author_Institution :
Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
fYear :
2009
fDate :
4-8 Oct. 2009
Firstpage :
743
Lastpage :
744
Abstract :
InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.
Keywords :
III-V semiconductors; epitaxial growth; gallium compounds; indium compounds; optical pumping; quantum dot lasers; InP-GaInP; TEM00 emission; epitaxial growth; gain structure; optically pumped semiconductor disk laser; quantum dot semiconductor disk laser; self assembled; single transverse mode; wavelength 740 nm; Indium phosphide; Laser beams; Laser modes; Mirrors; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Thermal management; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
ISSN :
1092-8081
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2009.5343357
Filename :
5343357
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2537102
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