• DocumentCode
    2537115
  • Title

    Transparency current influence on the temperature dependent threshold of undoped and P-doped QD laser diodes

  • Author

    Ozgur, Gokhan ; Demir, Abdullah ; Deppe, Dennis G.

  • Author_Institution
    Coll. of Opt. & Photonics, Univ. of Central Florida, Orlando, FL, USA
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    737
  • Lastpage
    738
  • Abstract
    We show that the transparency current plays a central role in setting the temperature dependence of both undoped and p-doped quantum dot lasers. The influence of inhomogeneous broadening is also analyzed and shown to influence.
  • Keywords
    quantum dot lasers; semiconductor lasers; QD laser diodes; quantum dot laser diodes; temperature dependent threshold; transparency current influence; Charge carrier processes; Diode lasers; Doping; Electrons; Land surface temperature; Laser modes; Quantum dot lasers; Semiconductor process modeling; Temperature dependence; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343358
  • Filename
    5343358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2537115