• DocumentCode
    2537150
  • Title

    Controlled growth of InGaAs/InGaAsP/InP Quantum Dots using diblock copolymer lithography and selective area MOCVD growth

  • Author

    Mawst, L.J. ; Park, J.H. ; Kirch, J. ; Liu, C.C. ; Rathi, M.K. ; Nealey, P.F. ; Kuech, T.F.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Wisconsin - Madison, Madison, WI, USA
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    739
  • Lastpage
    740
  • Abstract
    Diblock copolymer nanopatterning and selective growth is utilized to produce InGaAsP/In0.53Ga0.47As/InGaAsP Quantum Dots on InP substrates, demonstrating RTPL near 1.6 mum. Electroluminescence near 1.25 mum is achieved from ridge-waveguide devices.
  • Keywords
    gallium arsenide; indium compounds; lithography; nanopatterning; polymer blends; semiconductor quantum dots; InGaAs-InGaAsP-InP; diblock copolymer lithography; diblock copolymer nanopatterning; ectroluminescence; quantum dots; ridge-waveguide devices; selective area MOCVD growth; Dielectric substrates; Indium gallium arsenide; Indium phosphide; Lithography; MOCVD; Nanopatterning; Optical surface waves; Quantum dots; Self-assembly; Thickness control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343359
  • Filename
    5343359
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2537150