Title :
Recent progress and future prospects of GaN HEMTs for base-station applications
Author :
Kikkawa, Toshihide
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
This paper describes the recent progress and future prospects of GaN high electron mobility transistors (HEMTs) for 3G-wireless base station applications. It introduces a summary of most important activities at several organizations all over the world. As the Fujitsu progress, a state-of-the-art 250-W AlGaN/GaN-HEMTs push-pull transmitter amplifier operated at a drain bias voltage of 50 V is addressed. The amplifier, combined with a digital pre-distortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than -50 dBc for 4-carrier W-CDMA signals with a drain supply voltage of 50 V. This paper also demonstrates a stable operation under RF stress testing for 1000 h at a drain bias voltage of 60 V. After comparing LDMOS, GaAs and GaN, future prospects of GaN-HEMT is discussed to verify that an AlGaN/GaN HEMTs amplifier is suitable for 3G W-CDMA systems.
Keywords :
3G mobile communication; III-V semiconductors; MOS integrated circuits; aluminium compounds; amplifiers; code division multiple access; gallium compounds; high electron mobility transistors; radiofrequency amplifiers; wide band gap semiconductors; 1000 h; 250 W; 3G W-CDMA system; 3G-wireless base station applications; 4-carrier W-CDMA signals; 50 V; 60 V; AlGaN-GaN; LDMOS; RF stress testing; channel leakage power ratio; digital pre-distortion system; drain bias voltage; drain supply voltage; high electron mobility transistors; push-pull transmitter amplifier; state-of-the-art AlGaN-GaN HEMT; Aluminum gallium nitride; Base stations; Gallium nitride; HEMTs; MODFETs; Multiaccess communication; Operational amplifiers; Power amplifiers; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392472