Title :
Efficient TE-TM mode conversion in a GaInAsP single-trench waveguide
Author :
Kim, Sang-Hun ; Takei, Ryohei ; Shoji, Yuya ; Mizumoto, Tetsuya
Author_Institution :
Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
A TE-TM mode converter is proposed in a single trench GaInAsP/InP waveguide, which is fabricated by a single masking and etching process. 95 % TE-TM mode conversion was measured at a wavelength of 1.55 mum in a 210-mum-long.
Keywords :
III-V semiconductors; arsenic compounds; etching; gallium compounds; indium compounds; masks; optical fabrication; optical waveguides; TE-TM mode conversion; etching process; masking process; single-trench waveguide; wavelength 1.55 mum; wavelength 210 mum; Etching; Indium phosphide; Optical devices; Optical interferometry; Optical polarization; Optical refraction; Optical sensors; Optical variables control; Optical waveguides; Wavelength conversion;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343365
