Title :
Lateral-field-excitation acoustic resonators for monolithic oscillators and filters
Author :
Lau, Woo Wai ; Song, Yonghua ; Kim, Eun Sok
Author_Institution :
Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
Abstract :
This paper describes a high-frequency acoustic resonator built on a low-stress silicon nitride cantilever for monolithic filters and oscillators at above 1 GHz. The unique features of our resonator include (1) usage of lateral electric field (rather than thickness-direction field) to excite bulk acoustic wave in piezoelectric ZnO film and (2) usage of surface micromachining to fabricate the resonator on silicon wafer. Our resonator is measured to have a resonant frequency of 531 MHz with Q of 738 and figure-of-merit of 207
Keywords :
acoustic resonators; bulk acoustic wave devices; micromachining; micromechanical resonators; piezoelectric thin films; zinc compounds; 531 MHz; Si; ZnO; bulk acoustic wave; cantilever; lateral-field-excitation acoustic resonators; piezoelectric film; resonant frequency; surface micromachining; Acoustic waves; Film bulk acoustic resonators; Micromachining; Oscillators; Piezoelectric films; Resonator filters; Semiconductor films; Silicon; Surface acoustic waves; Zinc oxide;
Conference_Titel :
Frequency Control Symposium, 1996. 50th., Proceedings of the 1996 IEEE International.
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-3309-8
DOI :
10.1109/FREQ.1996.559925
