Title :
SiGe BiCMOS technologies - addressing the communication market needs
Author :
Joseph, Alvin J.
Author_Institution :
Semicond. R&D Center, IBM Microelectron. Div., Essex Junction, VT, USA
Abstract :
The market success of SiGe BiCMOS technology can be mainly attributed to its ability to deliver superior product performance with high levels of integration and yields that ultimately leads to a very competitive cost per chip. In the context of such as success, it is worthwhile to examine the features of SiGe BiCMOS technology that addresses communication market needs. Here we present an overview of the SiGe BiCMOS technology offerings with the focus on the progress of SiGe HBT performance and the technology maturity.
Keywords :
BiCMOS integrated circuits; elemental semiconductors; heterojunction bipolar transistors; silicon compounds; telecommunication; SiGe; SiGe BiCMOS technology; SiGe HBT performance; communication market needs; technology maturity; BiCMOS integrated circuits; Costs; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Isolation technology; Photonic band gap; Shape; Silicon germanium;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392478
