DocumentCode
2537339
Title
SiGe BiCMOS technologies - addressing the communication market needs
Author
Joseph, Alvin J.
Author_Institution
Semicond. R&D Center, IBM Microelectron. Div., Essex Junction, VT, USA
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
35
Lastpage
38
Abstract
The market success of SiGe BiCMOS technology can be mainly attributed to its ability to deliver superior product performance with high levels of integration and yields that ultimately leads to a very competitive cost per chip. In the context of such as success, it is worthwhile to examine the features of SiGe BiCMOS technology that addresses communication market needs. Here we present an overview of the SiGe BiCMOS technology offerings with the focus on the progress of SiGe HBT performance and the technology maturity.
Keywords
BiCMOS integrated circuits; elemental semiconductors; heterojunction bipolar transistors; silicon compounds; telecommunication; SiGe; SiGe BiCMOS technology; SiGe HBT performance; communication market needs; technology maturity; BiCMOS integrated circuits; Costs; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Isolation technology; Photonic band gap; Shape; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
ISSN
1550-8781
Print_ISBN
0-7803-8616-7
Type
conf
DOI
10.1109/CSICS.2004.1392478
Filename
1392478
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