Title :
200GHz fT SiGe HBT load pull characterization at mm-wave frequencies
Author :
Boglione, Luciano ; Webster, Richard T.
Author_Institution :
Univ. of Massachusetts, Lowell, MA, USA
Abstract :
The load pull measurement of a commercially available SiGe HBT device has been performed at Q band over frequency and bias. Measured mm-wave results for the SiGe process under test have never been made available to the general public before and no comparable information on similar SiGe devices is available in the public domain. The goal of this paper is to begin to fill this gap: load pull results along with a discussion of the characterization setup and procedure are presented.
Keywords :
heterojunction bipolar transistors; Q band; SiGe; SiGe HBT load pull characterization; SiGe devices; frequency 200 GHz; load pull measurement; Design optimization; Force measurement; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Power amplifiers; Power generation; Q measurement; Silicon germanium; Testing; load-pull; measurement; mm-wave SiGe HBT device;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6240-7
DOI :
10.1109/RFIC.2010.5477275
