A 3.4 GHz to 4.3 GHz frequency-reconfigurable class E power amplifier with an integrated CMOS-MEMS LC balun

Author

Wang, Leon ; Mukherjee, Tamal

Author_Institution

Dept. of ECE, Carnegie Mellon Univ., Pittsburgh, PA, USA

fYear

2010

fDate

23-25 May 2010

Firstpage

167

Lastpage

170

Abstract

A monolithically integrated differential class E power amplifier capable of dynamically switching between 3.4 GHz and 4.3 GHz operation has been designed and fabricated in a 0.35 μm BiCMOS process; this power amplifier also includes an integrated CMOS-MEMS variable capacitor enabled LC balun for differential to single-ended conversion. The power amplifier achieves a maximum output power of 19.1 dBm and a maximum power added efficiency of 15.1% with a supply voltage of 3.3 V.

Keywords

BiCMOS analogue integrated circuits; baluns; micromechanical devices; microwave power amplifiers; BiCMOS process; CMOS-MEMS variable capacitor; LC balun; frequency 3.4 GHz to 4.3 GHz; frequency-reconfigurable class E power amplifier; monolithically integrated differential class E power amplifier; single-ended conversion; size 0.35 mum; voltage 3.3 V; Frequency; Impedance matching; MOS capacitors; Parasitic capacitance; Power amplifiers; Q factor; Radiofrequency amplifiers; Switched capacitor circuits; Switches; Switching circuits; Power amplifiers; microelectromechanical devices; power combiners;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477276

Filename

5477276