Title :
A 120µW fully-integrated BPSK receiver in 90nm CMOS
Author :
Yan, Han ; Macias-Montero, Jose Gabriel ; Akhnoukh, Atef ; De Vreede, Leo C N ; Long, John R. ; Pekarik, John J. ; Burghartz, Joachim N.
Author_Institution :
ERL/DIMES, Delft Univ. of Technol., Delft, Netherlands
Abstract :
In this work a highly integrated, ultra-low-power BPSK receiver for short-range wireless communications is presented. The receiver consists of a power divider, two injection-locked RC oscillators with limiting buffers and an XOR output stage. The demodulation principle is based on the dynamic phase response of the two BPSK signal injected oscillators. As proof of concept, a 300 MHz receiver was implemented in a 90nm CMOS technology. The whole receiver has an active die area of 0.04 mm2, a sensitivity of -34 dBm at 1Mbps and consumes only 120 μW from 1V supply, which relates to an energy per bit of only 0.12 nJ/bit, a value which is among the best reported up-to-date for low-transmission rate systems.
Keywords :
CMOS integrated circuits; buffer circuits; injection locked oscillators; phase shift keying; power dividers; radio receivers; BPSK receiver; CMOS; XOR output stage; injection-locked RC oscillators; limiting buffers; power 120 muW; power divider; short-range wireless communications; size 90 nm; Binary phase shift keying; CMOS technology; Demodulation; Energy consumption; Injection-locked oscillators; Phase shift keying; RF signals; Radio frequency; Radiofrequency integrated circuits; Wireless sensor networks; BPSK; CMOS integrated circuit; Low-power RF; injection-locked oscillator;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6240-7
DOI :
10.1109/RFIC.2010.5477277
